Method of producing a metal-oxide semiconductor device

Details Method of producing a metal-oxide semiconductor device Method of producing a metal-oxide semiconductor device

1989-08-10

1991-01-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437154, 437 29, 437 40, 437 45, 148DIG126, 148DIG18, 148DIG167, H01L 21336

Patent

active

049870980

ABSTRACT:
The present invention relates to a method of producing a metal-oxide semiconductor device with improved capacity for preventing an actuation of a parasitic bipolar transistor. In the present invention, a metal-oxide seminconductor device is produced through a process in which a single conductive semiconductor region with low-impurity density, on top of which region a gate electrode is provided via a gate-insulating film, consists of two sub-layers with different specific resistance. The upper sub-layer of the region has a significantly lower specific resistance than the lower sub-layer of the region. When a lifetime-reducing agent for reducing the reverse-recovery time of a built-in diode is diffused into the single conductive semiconductor region with low-impurity density, the lifetime-reducing agent concentrates in the upper sub-layer of the region, thereby increasing the specific resistance of the upper sub-layer. Because the specific resistance of the upper sub-layer is initially low, however, the increase in the specific resistance is compensated, and the on-resistance at the time of conduction of the metal-oxide semiconductor device does not increase as a whole. Consequently, the reverse-recovery time of the built-in diode is reduced without an overall increase in the on-resistance, thereby preventing an actuation of the parasitic bipolar transistor without additional power loss.

REFERENCES:
patent: 3640783 (1972-02-01), Bailey
patent: 4370180 (1983-01-01), Azuma et al.
patent: 4454527 (1984-06-01), Patalong
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4662957 (1987-05-01), Hagino
patent: 4717940 (1988-01-01), Shinohe et al.
patent: 4777149 (1988-10-01), Tanabe et al.
patent: 4794432 (1988-12-01), Yilmaz et al.
patent: 4803532 (1989-02-01), Mihara
patent: 4914047 (1990-04-01), Seki

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