Process for fabricating a DRAM trench capacitor

Details Process for fabricating a DRAM trench capacitor Process for fabricating a DRAM trench capacitor

1994-12-29

1997-10-14

Tsai, Jey

Fishing, trapping, and vermin destroying

437919, 437203, H01L 2170, H01L 2700

Patent

active

056772190

ABSTRACT:
An improved trench cell capacitor for a memory cell and process for fabricating the same. The process includes the steps of forming a trench within a semiconductor body; forming a dielectric layer peripherally within the trench and filling at least a portion of the trench by epitaxially growing semiconductor material therein. The epitaxially grown semiconductor material is void and seam-free, resulting in a robust trench cell that is highly reliable, thereby improving process yield.

REFERENCES:
patent: 4728623 (1988-03-01), Lu et al.
patent: 4728625 (1988-03-01), Lu
patent: 5316962 (1994-05-01), Matsuo et al.

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