Through-field implant isolated devices and method

Details Through-field implant isolated devices and method Through-field implant isolated devices and method

1989-10-24

1991-01-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 28, 437 70, H01L 21265, H01L 2176

Patent

active

049870939

ABSTRACT:
Preferred embodiments include channel stop implants for CMOS devices by through field boron implants (152) after the field oxide (144, 145) has been grown and with the implant depth determined by the thin portions of the field oxide (145). Junction (154) breakdown is preserved by channeling the implant (152) to penetrate far below the junctions (154).

REFERENCES:
patent: 3860454 (1975-01-01), De Witt et al.
patent: 4261761 (1981-04-01), Sato et al.
Tsai et al., IEEE Electron Device Letters, vol. 10, No. 7 (Jul. 1989), pp. 307-309.

Affiliated with

Also associated with

Rating

Through-field implant isolated devices and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Through-field implant isolated devices and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Through-field implant isolated devices and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1554755