Method for fabricating a vertical bipolar transistor

Details Method for fabricating a vertical bipolar transistor Method for fabricating a vertical bipolar transistor

1996-04-18

1997-10-14

Niebling, John

Fishing, trapping, and vermin destroying

437 74, 437 76, 437 77, 148DIG10, 148DIG11, 148DIG39, H01L 21265

Patent

active

056772092

ABSTRACT:
A method for reproducibly fabricating a thin base region of a vertical bipolar transistor therein, which has a high transfer speed and increases a current driving force, and a method for increasing the isolating effect of the vertical bipolar transistor through forming a second buried layer implanting N-type impurity into an upper peripheral portion of first buried layer and activating the implanted N-type impurity, then out-diffusing the activated N-type impurity at the same time as growing the epitaxial layer, so the second buried layer definitely separates the elements of the transistor. Both the first buried layer and the second buried layer define a portion of epitaxial layer to form an active region which functions as a collector region. A subcollector region is formed above first buried layer in active region, and a base region is formed at a first upper portion of the active region to overlay the subcollector region. Therefore, the base region having a thin width is reproducibly formed by implanting N-type impurity and annealing the implanted N-type impurity in a nitrogen atmosphere, and separating the elements of the transistor is ensured through forming second buried layer according to the present invention.

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