Method for fabricating a thin film transistor using silicide lay

Details Method for fabricating a thin film transistor using silicide lay Method for fabricating a thin film transistor using silicide lay

1996-03-05

1997-10-14

Niebling, John

Fishing, trapping, and vermin destroying

437 44, 437200, H01L 21265, H01L 2184

Patent

active

056772076

ABSTRACT:
A method for forming a thin film transistor includes the steps of depositing a semiconductor layer on a substrate and patterning the semiconductor layer to form an active region, forming a gate insulation layer on the active layer and the substrate, forming a gate conductive layer on the gate insulation layer, forming a metal layer on the gate conductive layer and the gate insulation layer, forming a silicide layer by reacting the gate conductive layer with the metal layer, removing an unreacted portion of the metal layer, forming a high-density impurity region in the active layer by ion-implantation using the silicide layer as a mask, forming a gate electrode by removing the silicide layer, and forming an interlayer insulation layer on the exposed surface of the gate electrode and gate insulation layer.

REFERENCES:
patent: 4716131 (1987-12-01), Okazawa et al.
patent: 5221632 (1993-06-01), Kurimoto et al.
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5543340 (1996-08-01), Lee

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