Method for manufacturing a film resistor

Details Method for manufacturing a film resistor Method for manufacturing a film resistor

1989-09-25

1991-01-22

Silverman, Stanley

Coating processes

Electrical product produced

Resistor for current control

427 39, 427 99, 156643, B05D 512

Patent

active

049870106

ABSTRACT:
A method for manufacturing a film resistor for use as a thermal conductivity detector, particularly for gas analyzers. The film resistor is composed of a carrier of insulating material and of a thin resistance layer, preferably composed of platinum, that is applied to the carrier by cathode sputtering in an atmosphere inert gas. The resistant layer and the carrier are cleaned proceeding from the metallized side using an argon sputtering process. The film resistor is then coated with at least one plasma-enhanced CVD layer for the purpose of protection against aggressive gases.

REFERENCES:
patent: 4288776 (1981-09-01), Holmes
patent: 4585517 (1980-04-01), Stemple
patent: 4822697 (1989-04-01), Haluska et al.
patent: 4895734 (1990-01-01), Yoshida et al.

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