Gate turn off semiconductor rectifiers

Details Gate turn off semiconductor rectifiers Gate turn off semiconductor rectifiers

1975-05-27

1977-12-06

Miller, Jr., Stanley D.

357 38, 357 58, 357 90, H01L 2990

Patent

active

040620328

ABSTRACT:
In semiconductor controlled rectifiers which can be of otherwise conventional design and configuration, a layer of relatively high resistivity material is disposed between the base region to which the gate electrode is connected and the otherwise immediately adjacent emitter region.

REFERENCES:
patent: 3146135 (1964-08-01), Sah
patent: 3337783 (1967-08-01), Stehney
patent: 3370209 (1968-02-01), Davis et al.
patent: 3538401 (1970-11-01), Chu
patent: 3566206 (1971-02-01), Bartecink et al.
patent: 3798079 (1974-03-01), Chu et al.

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