Silicon-insulator-polysilicon infrared imaging device and method

Details Silicon-insulator-polysilicon infrared imaging device and method Silicon-insulator-polysilicon infrared imaging device and method

1976-11-01

1977-12-06

Borchelt, Archie R.

Radiant energy

Infrared-to-visible imaging

Including detector array

250370, 357 24, H01J 3149

Patent

active

040619168

ABSTRACT:
A layer of epitaxial silicon is grown on a silicon growth substrate, a thin ayer of silicon dioxide or other suitable insulator is grown (in the case of silicon dioxide) or deposited (for other insulators) on the epitaxial layer, and a thick layer of polysilicon is grown on the dioxide layer. The silicon growth substrate is then removed, and the epitaxial layer is etched to form islands on the insulator layer. Some of the islands are doped to form an array of infrared sensitive detectors, and a large island is doped to act as CCD region. Electrical leads are fabricated, some to provide drive and output lines for the CCDs, other to provide connections of the detectors to respective CCDs, and yet others to provide common leads for the detectors.

REFERENCES:
patent: 3806729 (1974-04-01), Caywood
patent: 3842274 (1974-10-01), Greene et al.
patent: 3883437 (1975-05-01), Nummedal et al.
patent: 3996599 (1976-12-01), King

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