Method for forming a high density EEPROM cell array with improve

Details Method for forming a high density EEPROM cell array with improve Method for forming a high density EEPROM cell array with improve

1994-10-05

1995-09-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 48, H01L 218247

Patent

active

054533937

ABSTRACT:
The memory array of a high density, electrically-erasable, programmable read-only-memory (EEPROM) is divided into a series of segments which are individually accessible via a plurality of segment select transistors. When a specific memory cell or cells is to be read, only the segment select transistors which correspond to the segment of memory which contains the specific memory cell or cells are turned on. As a result, the time required to access the specific memory cell or cells can be significantly reduced.

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Boaz Eitan, R. Kazerounian and A. Bergemont, "Alternate Metal Virtual Ground (AMG)--A New Scaling Concept for Very High-Density EPROM's", IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1991, New York, U.S., pp. 450-452.
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