Process for forming flat-cell mask ROMS

Details Process for forming flat-cell mask ROMS Process for forming flat-cell mask ROMS

1993-12-02

1995-09-26

Carroll, J.

Fishing, trapping, and vermin destroying

437 26, 437 52, 257390, 257754, H01L 2702

Patent

active

054533929

ABSTRACT:
A method of manufacture for flat-cell Mask ROM devices on a silicon semiconductor substrate covered with a first gate oxide layer comprises, forming a first conductor structure on the first gate oxide layer, forming a buried conductive structure within the substrate by ion implantation with a portion thereof in juxtaposition with the first conductor structure, etching away the exposed surfaces of the first gate oxide layer exposing portions of the semiconductor, forming a second gate oxide layer on the surface of the semiconductor, and forming a second conductor structure on the second gate oxide layer.

REFERENCES:
patent: 4028717 (1977-06-01), Joy et al.
patent: 4078947 (1978-03-01), Johnson et al.
patent: 4437108 (1984-03-01), Gardiner et al.
patent: 4458406 (1984-07-01), De La Moneda et al.
patent: 4974042 (1990-11-01), Ashida et al.
patent: 5117389 (1992-05-01), Yiu
patent: 5291435 (1994-03-01), Yu

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