Semiconductor integrated circuit and method of manufacture

Details Semiconductor integrated circuit and method of manufacture Semiconductor integrated circuit and method of manufacture

1974-01-09

1976-02-10

Lynch, Michael J.

357 41, 357 52, 357 59, H01L 2978, H01L 2702, H01L 2934, H01L 2904

Patent

active

039381749

ABSTRACT:
An integrated circuit has semiconductor devices on a substrate. The devices each have gates of polycrystalline silicon and the devices are insulated from each other by a stopper diffused into the substrate between said devices at least in the regions adjacent said gates. Reliability of the integrated circuit is improved by having each polycrystalline silicon gate formed with a region adjacent said stopper diffused with impurity of the same polarity as the impurity diffused in said stopper.

REFERENCES:
patent: 3711753 (1973-01-01), Brand et al.

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