Patent
1983-05-18
1986-12-30
Edlow, Martin H.
357 39, 357 30, 357 51, 357 2, H01L 2974, H01L 3108, H01L 3110
Patent
active
046332880
ABSTRACT:
A thyristor comprises a semiconductor body containing a n emitter contacted by a cathode electrode and an adjacent p base, with a p emitter contacted by an anode electrode and an adjacent n base. The thyristor comprises a projection of the p base which extends up to the cathode boundary surface of the semiconductor body and likewise comprises a projection of the n base extending up to the boundary surface and which is adjacent to the first-mentioned projection. A gate electrode is carried insulated on the boundary surface covering the projection of the p base and serves to control the thyristor. Triggerability of the thyristor by a low light power and the attainment of a high critical voltage rise rate dU/dt relative to an inhibit voltage U is achieved by an illuminatable, light-sensitive resistor for ignition which is connected between the gate electrode and the projection of the n base and a further resistor which is connected between the gate electrode and the cathode electrode. The invention finds particular use in power semiconductors.
REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4224634 (1980-09-01), Suedberg
G. Hatzinger, "Optoelektronische Bauelemente und Schaltungen" Siemens Aktiengesellschaft, 1977, pp. 36-41, 54-67.
Edlow Martin H.
Jackson Jerome
Siemens Aktiengesellschaft
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