Patent
1983-11-08
1986-12-30
Edlow, Martin H.
357 2, 357 4, H01L 2978
Patent
active
046332847
ABSTRACT:
A new and improved thin film field effect transistor and method provides such a transistor having increased operating frequencies and higher output currents. The transistor includes a gate electrode having a non-coplanar surface with respect to the substrate and a deposited semiconductor material overlying the gate electrode to form a current conductor channel between a source and drain. The length of the current conduction channel is determined by the thickness of the gate electrode which can be accurately controlled. As a result, short channel lengths are possible without high precision photolithography for high output currents and fast operating speeds. Further, a gate insulator is disposed between the gate and the deposited semiconductor. The gate insulator, which can be a gate oxide, can be annealed prior to the deposition of the deposited semiconductor to provide enhanced field effect mobilities. This further increases the transistor output currents and operating speeds.
REFERENCES:
patent: 3191061 (1965-06-01), Weimer
patent: 3669661 (1972-06-01), Page et al.
IBM Technical Disclosure Bulletin, vol. 11, #3, Aug. 1968, "High Speed FET" by Drangeid, p. 332.
Cannella Vincent D.
Hansell Gregory L.
Yaniv Zvi
Edlow Martin H.
Energy Conversion Devices Inc.
Gray, Jr. Richard O.
Nolan Robert S.
Norris Lawrence G.
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