Plasma chemical vapor deposition device capable of suppressing g

Details Plasma chemical vapor deposition device capable of suppressing g Plasma chemical vapor deposition device capable of suppressing g

1994-12-22

1996-01-30

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

20429809, 118724, 118725, C23C 1600

Patent

active

054877865

ABSTRACT:
There is provided a plasma CVD device which can deposit a high-quality a-Si:H or other film at a high rate, and which can improve production efficiency thereof remarkably. The CVD device has a substrate holding electrode and a high frequency application electrode arranged opposite to and parallel to a substrate held by the substrate holding electrode. A material gas introduced between the substrate holding electrode and the high frequency application electrode is decomposed by glow discharge, so that a thin film is deposited on the heated substrate. A first electrode heater for heating a peripheral portion of the high frequency application electrode is installed along the peripheral portion of the high frequency application electrode. A second electrode heater for heating the peripheral portion of the high frequency application electrode and a surface of the high frequency application electrode opposite to its surface facing the substrate is composed of a bottom portion and a side portion provided uprightly along a peripheral edge of the bottom portion and formed in a concave shape to surround the high frequency application electrode with a spacing therebetween.

REFERENCES:
patent: 5085750 (1992-02-01), Soraoka
patent: 5290758 (1994-03-01), Wordenweber
patent: 5324360 (1994-06-01), Kozuka
patent: 5336326 (1994-08-01), Kamer
patent: 5348587 (1994-09-01), Eichman
patent: 5364481 (1994-11-01), Sasaki
patent: 5366555 (1994-11-01), Kelly
patent: 5417834 (1995-05-01), Latz
Patent Abstracts of Japan, vol. 008, No. 059 (E-232) Mar. 17, 1984, corresponding to Japanese Patent Publication No. 58-209110.

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