Reducing hydrogen content of vacuum deposited films

Details Reducing hydrogen content of vacuum deposited films Reducing hydrogen content of vacuum deposited films

1984-08-08

1986-02-18

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, 204192N, 2504922, 2504923, H01L 21302

Patent

active

045713480

ABSTRACT:
A method of treating thin films containing a significant atomic proportion of hydrogen to enable such films to be subjected to elevated temperatures without blistering. The films are subjected to a significant, i.e. damaging, high implantation prior to heat treatment.

REFERENCES:
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patent: 4321317 (1982-03-01), Mac Iver
patent: 4379727 (1983-04-01), Hansen et al.
patent: 4410611 (1983-10-01), Mac Iver
patent: 4466839 (1984-08-01), Dathe et al.
Reif et al., "Low Temperature Process to Increase the Grain Size in Polysilicon Films", Electronics Letters, Aug. 20, 1981, vol. 17, No. 17, pp. 586-588.
Amano et al., "A Novel Three-Step Process for Low-Defect-Density Silicon on Sapphire," Appl. Phys. Lett., 39(2), Jul. 15, 1981, pp. 163-165.
J. A. Mc Millan and E. M. Peterson, "Kinetics of Decomposition of Amorphous Hydrogenated Silicon Films", J. Appl. Physics., v. 50, No. 8, pp. 5238-5241 (Aug. 1979).

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