Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1984-05-07
1986-12-30
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330288, H03F 316
Patent
active
046331921
ABSTRACT:
An integrated circuit operates as a current-mirror type CMOS amplifier. The integrated circuit is constructed of a first inverter and a second inverter. The first inverter is formed of a first P-channel FET whose source is connected to a power supply with a gate and a drain thereof being connected to a first node; and a first N-channel FET whose drain is connected to the first node with a gate thereof being connected to a first input terminal and with a source thereof being earthed. The second inverter is formed of a second P-channel FET whose source is connected to a power supply with a gate thereof being connected to the first node and with a drain thereof being connected to a second node; and a second N-channel FET whose drain is connected to the second node with a gate thereof being connected to a second input terminal and with a source thereof being earthed. The first inverter and the second inverter having different conductances which vary according to a predetermined ratio in order to reduce current consumption.
REFERENCES:
patent: 4267517 (1981-05-01), Iida et al.
"Mixed MOS Type 64K Bit Static Ram", Mitsubishi Electric Corporation Technical Report, vol. 58, No. 8, 1984.
Mitsubishi Denki & Kabushiki Kaisha
Mullins James B.
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