Patent
1990-04-24
1991-07-30
Mintel, William
357 60, 357 52, 357 59, H01L 3300
Patent
active
050363735
ABSTRACT:
An electric device comprises a crystalline film deposited on a substrate and an electrode formed on the film. The crystalline film consists of a number of colomnar crystal grown at right angles from the surface of the substrate. There are many grain boundaries passing through the crystalline film from the substrate surface to the electrode. The direct contact between the electrode and the grain boundaries is prevented by means of an insulating coating applied only to the portion of surfaces of the columnar crystals where the boundaries appear.
REFERENCES:
patent: 4901133 (1990-02-01), Curran et al.
patent: 4949154 (1990-08-01), Haken
Goetzberger et al., "Surface States in Silicon from Charges in the Oxide Coating," Applied Physics Letters, Feb. 1, 1968, vol. 12, No. 3, pp. 95-97.
Seager et al., "Passivation of Grain Boundaries in Polycrystalline Silicon," Appl. Phys. Lett. 34(5), Mar. 1, 1979, pp. 337-340.
Faraone et al., "Characterization of Thermally Oxidixed N.sup.+ Polycrystalline Silicon," IEEE Transactions on Electron Devices, vol. ED-32, No. 3, Mar. 1985, pp. 577-583.
Mintel William
Semiconductor Energy Laboratory Co,. Ltd.
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