Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1992-09-10
1993-12-28
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257275, 257280, H01L 2980
Patent
active
052742563
ABSTRACT:
In a dual gate FET of this invention, the number of points for supplying a signal to a first gate electrode and the number of points for supplying a signal to a second gate electrode are set to be optimal values so that a noise index is minimized. A difference in the electrical length between each signal supply point of each of the first and second gate electrodes and the corresponding gate input terminal has a negligible magnitude with respect to one quarter of the wavelength of an input signal applied to the corresponding gate input terminal. The dual gate FET has a low-noise arrangement, and a microwave can be applied to either one of the first and second gate electrodes, thereby obtaining, e.g., a low-noise mixer. In this case, a separator required upon use of a single gate FET can be omitted, thereby easily arranging a monolithic IC.
REFERENCES:
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Liechti, "Microwave Field-Effect Transistors-1976", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-24, No. 6, Jun. 1976, pp. 279-299.
Conference Proceedings-4th European Microwave Conference, Sep. 10-13, 1974 pp. 87-90 "Characteristics of Dual-Gate GaAs Mesfets" by Charles A. Liechti.
Patent Abstracts of Japan vol. 7, No. 27, Feb. 3, 1983 and Japanese pending appl. 57-181169, NEC Corp. Patent Abstracts of Japan, vol 11, No. 117, Apr. 11, 1987, and Japan. appl. 61-263249 (Natl. Aeronautics & Space).
Ngo Ngan
Sumitomo Electric Industries Ltd.
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