Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1992-08-03
1993-12-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257101, 257102, 257103, H01L 3300
Patent
active
052742520
ABSTRACT:
A light-emitting device in which at low current levels the increase in light intensity is linear with respect to the increase in current, thereby facilitating control of the light intensity includes a first semiconductor layer in which the semiconductor is of p-type or n-type; a second semiconductor layer that is formed by diffusing into the first semiconductor layer an impurity that is of the other semiconductor type to form a p-n junction; a third semiconductor layer that is of the same semiconductor type as that of the first semiconductor layer that is formed over at least a portion of the second semiconductor layer to reduce the length of the p-n junction on the surface of the device.
REFERENCES:
patent: 4275403 (1981-06-01), Lebailly
patent: 5189496 (1993-02-01), Kuwabara
Kelly et al., "High-Efficiency Light-Emitting Diode Using Double-Zinc Diffusions," IBM Technical Disclosure Bulletin, vol. 14, No. 12, May, 1972, p. 3867.
Bartholomew et al., "Monolithic LED Display Arrays," IBM Technical Disclosure Bulletin, vol. 16, No. 1, Jun. 1973, pp. 282-283.
Eastman Kodak Company
Mintel William
Owens Raymond L.
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