Manufacturing a field oxide region for a semiconductor device

Details Manufacturing a field oxide region for a semiconductor device Manufacturing a field oxide region for a semiconductor device

1984-12-12

1986-02-18

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29571, 29578, 29580, 357 47, H01L 2176, H01L 21425

Patent

active

045703256

ABSTRACT:
A method of manufacturing a semiconductor device in which a micro-patterned field oxide film can be formed includes the steps of: sequentially forming an oxidation-resistive film and an oxidizable film on a semiconductor substrate; forming a window in a predetermined region of said oxidizable film, in which said oxidation-resistive film is exposed; performing thermal oxidation to said oxidizable film so as to convert it into an insulating film and for narrowing a width of said window by volume expansion due to conversion; forming a field oxide film in a region of said semiconductor substrate defined by said window of said insulating film; and forming a semiconductor element in the region of said semiconductor substrate isolated by said field oxide film.

REFERENCES:
patent: 3886000 (1975-05-01), Bratter et al.
patent: 4460413 (1984-07-01), Hirata et al.
patent: 4465532 (1984-08-01), Fukano

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