Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-10-17
1986-02-18
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 148 15, 148175, 148187, 357 67, 357 91, H01L 21265, H01L 754, H01L 736
Patent
active
045703248
ABSTRACT:
Ohmic contacts are formed on an n-type gallium arsenide semiconductor by applying a layer of nickel to a contact surface of the semiconductor, bombarding the nickel layer with a beam of germanium ions to drive nickel and germanium atoms into the contact area of the semiconductor, annealing the semiconductor by means of lamp annealing techniques, and then forming a layer of gold to at least a portion of the irradiated nickel layer to facilitate connection of an electrical conductor thereto. Tellerium may be used in place of germanium for n-type semiconductors. For p-type gallium arsenide semiconductors, ohmic contacts may be formed by bombarding a nickel layer with either zinc or copper ions.
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Smith Steven R.
Solomon James S.
Roy Upendra
The University of Dayton
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