Method of fabricating microelectronic device incorporating capac

Fishing – trapping – and vermin destroying

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437919, 437 47, 437 54, 148DIG14, H01L 2170

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active

050360205

ABSTRACT:
A microelectronic device (10a) provides an improved capacitor (12a) having two plate members (22a, 26a) capacitively coupled via a dielectric layer (24). In accordance with the invention, contact portions (32a, 42a) have substantially twice the thickness of functional portions (28, 38) prior to etching oxide (16) to form contacts (18, 20). In this fashion, the total thickness of capacitor (12a) is minimized yet the thickness of contact portions (32a, 42a) is maximized. Hence, maximum thickness for etching purposes [to construct metal contact 18, 20)] is achieved. Thus the topographical profile of microelectronic device (10a) is essentially reduced to half that of the prior art while the necessary pre-etch thickness of contact portions (32a) and (42a) is maintained. Other pre-etch thickness proporations may be utilized between conductive layer subportions (34) and (36) and conductive layer subportions (44) and (46). For example,the conductive layer subportion (34) might be 2000 angstroms and the conductive layer subportion (36) might be 1000 angstroms so that a total preetch thickness of 3000 angstrom for contact portion (32a) is still achieved. In another embodiment of the invention, additional conductive layers may be added so that the respective plate members become interleaved, enhancing the capacitance of the resulting capacitor. In such an alternative embodiment, the individual thickness of the conductive layers may be decreased and yet by the advantageous configuration of the invention, the pre-etch thickness of the contact portions are not decreased and thus a contact etch may be safely performed.

REFERENCES:
patent: 4373250 (1983-02-01), Malwah
patent: 4460911 (1984-07-01), Salters
patent: 4630088 (1986-12-01), Dgura et al.
patent: 4665608 (1987-05-01), Okamoto et al.
patent: 4827323 (1989-05-01), Tigelaar et al.

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