Method of producing a complementary-type semiconductor device

Details Method of producing a complementary-type semiconductor device Method of producing a complementary-type semiconductor device

1990-06-13

1991-07-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 34, 437 40, 437 44, 437913, H01L 21266

Patent

active

050360191

ABSTRACT:
A method of producing a MIS transistor such as a MOS transistor has a P type and an N type channel transistors. P type and N type well regions are provided with the N type and the P type channel transistors, respectively. Both the P type and the N type well regions are covered with an insulating film on which gate electrodes are formed in a predetermined pattern by means of a photo-resist. This photo-resist is used as a channelling block layer when an N type impurity is implanted into the P type well region near the gate electrode so as to form an N type diffusion layer. As a result, the photo-resist prevents the N type impurity from channelling into the gate electrode so that a leak current does not occur within the P type well region of the N type channel transistor.

REFERENCES:
patent: 4062699 (1977-12-01), Armstrong
patent: 4382826 (1983-05-01), Pfleiderer et al.
patent: 4577391 (1986-03-01), Hsia et al.
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4599118 (1986-07-01), Han et al.
patent: 4599789 (1986-07-01), Gasner
patent: 4697333 (1987-10-01), Nakahara
patent: 4753898 (1988-06-01), Parrillo et al.
patent: 4908327 (1990-03-01), Chapman
patent: 4956311 (1990-09-01), Liou et al.
Takeda, E. et al., IEEE Trans. on Elec. Dev. ED-29, No. 4, 4/82, pp. 611-618.
Tsong, P. J. et al., IEEE Trans. on Elec. Dev. ED-29, No. 4, 4/82, pp. 590-596.

Affiliated with

Also associated with

Rating

Method of producing a complementary-type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a complementary-type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a complementary-type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1542485