Method of forming a non-selective silicon-germanium epitaxial fi

Details Method of forming a non-selective silicon-germanium epitaxial fi Method of forming a non-selective silicon-germanium epitaxial fi

1992-09-03

1993-12-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437106, 437131, H01L 21203

Patent

active

052739309

ABSTRACT:
A method of forming a silicon-germanium epitaxial layer using dichlorosilane as a silicon source gas. A semiconductor seed layer (15) is formed on a portion of a semiconductor layer (12) and on a portion of a layer of dielectric material (13). The semiconductor seed layer (15) provides nucleation sites for a Si-Ge epitaxial alloy layer (16). The epitaxial film (16) is formed on the semiconductor seed layer (15). Both the semiconductor seed layer (15) and the Si-Ge epitaxial film (16) are formed at a system growth pressure between approximately 25 and 760 millimeters of mercury and a temperature below approximately 900.degree. C. The semiconductor seed layer (15) and the Si-Ge epitaxial film (16) permit fabrication of a heterostructure semiconductor integrated circuit (10), thereby allowing the exploitation of band-gap engineering techniques.

REFERENCES:
patent: 4857270 (1989-08-01), Maruya et al.
patent: 5202284 (1993-04-01), Kamins et al.
patent: 5221413 (1993-06-01), Brasen et al.
Srinivasan, "Recent Advances in Silicon Epitaxy and its Application to High Performance Integrated Circuits," J. of Crystal Growth, vol. 70, 1984, pp. 201-217.

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