Fishing – trapping – and vermin destroying
Patent
1991-11-07
1993-12-28
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 60, 437919, H01L 2170, H01L 2700
Patent
active
052739252
ABSTRACT:
A method of fabricating capacitor electrodes in a stacked type of a dynamic random access memory (DRAM) is disclosed. This method of fabricating the capacitor electrodes of a storage capacitor in the semiconductor memory device having a memory cell comprising a MOS transistor and a storage capacitor includes the steps of forming a highly doped polysilicon film, patterning the highly doped polysilicon film in a predetermined shape, forming a lightly doped polysilicon film so as to cover the surface of the highly doped polysilicon film, and anisotropically etching the lightly doped polysilicon film. A cylindrical capacitor electrode having a bottom portion in a stacked type of memory cell can be easily formed. By increasing the height of the cylindrical portion, the area of the electrodes opposing with each other of the storage capacitor can be also easily increased.
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Chaudhuri Olik
NEC Corporation
Tsai H. Jey
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