Method for forming an SRAM by minimizing diffusion of conductivi

Details Method for forming an SRAM by minimizing diffusion of conductivi Method for forming an SRAM by minimizing diffusion of conductivi

1993-04-23

1993-12-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437918, H01L 21266

Patent

active

052739244

ABSTRACT:
A polysilicon layer is provided with a p-type impurity, and masked with an oxide mask to define a p-type region of the polysilicon layer. A second impurity is then provided into first unmasked regions of the polysilicon layer. A second oxide mask is deposited and anisotropically etched to form spacers adjacent to the first oxide mask. The spacers define two diffusion barrier regions of the polysilicon layer adjacent to the p-type region. An n-type impurity is then provided into second unmasked regions of the polysilicon layer to form two n-type regions adjacent the diffusion barrier regions. The diffusion barrier regions prevent cross diffusion of the p-type and the n-type impurities within the polysilicon layer, while also being of sufficient dimensions to permit normal p
operations.

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patent: 5104818 (1992-04-01), Silver
patent: 5185285 (1993-02-01), Hasaka
patent: 5198382 (1993-03-01), Campbell et al.

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