Fishing – trapping – and vermin destroying
Patent
1992-04-16
1993-12-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437101, 437913, 148DIG1, 148DIG150, 148DIG160, H01L 21265
Patent
active
052739198
ABSTRACT:
A method of producing a thin film field effect transistor. An insulating thin film layer is formed on a gate electrode subsequent to the gate electrode being formed on a substrate. A multilayer structure is formed on the insulating thin film layer subsequent to the insulating thin film layer being formed on the gate electrode by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline material layers.
REFERENCES:
patent: 3626328 (1971-12-01), Esaki
patent: 3721583 (1973-03-01), Blakeslee
patent: 4407710 (1983-10-01), Moustakas et al.
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4465706 (1984-08-01), Dalal et al.
patent: 4470060 (1984-09-01), Yamazaki
patent: 4558337 (1985-12-01), Saunier et al.
patent: 4609930 (1986-09-01), Yamazaki
patent: 4642144 (1987-02-01), Tiedje et al.
Physics of Semi Devices; S. M. Sze; 1969 pp. 568-586.
The TFT-A new TFT, Weimer, 1962 pp. 1462-1469; Proceedings of the IRE.
Abeles et al., "Amorphous Semiconductor Superlattices", Physical Review Letters, Nov. 21, 1983, vol. 51, No. 21, pp. 2003-2006.
Hirai Yutaka
Sano Masafumi
Takasu Katsuji
Tsuda Hisanori
Canon Kabushiki Kaisha
Hearn Brian E.
Trinh Michael
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