Method of producing a thin-film solar cell

Fishing – trapping – and vermin destroying

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136258, 136244, 437 82, 437109, 437174, 437233, 437247, 437967, 148DIG122, 427 74, H01L 3118, H01L 310392, H01L 310368

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052739112

ABSTRACT:
A method for producing a thin-film solar cell having a thin-film active layer on a graphite sheet substrate includes the steps of adhering two sheets of graphite together, forming semi-conductor thin films serving as active layers on second main surfaces of the two sheets of graphite, and separating the two sheets of graphite from each other. In this structure, stress caused by a difference in expansion coefficients between the upper sheet and the semiconductor thin film is cancelled by stress caused by a difference in expansion coefficients between the lower sheet and the semiconductor thin film. Therefore, curvature of the substrates is prevented whereby subsequent process steps are easily carried out. In addition, the number of products per unit time is doubled, thereby increasing productivity.

REFERENCES:
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patent: 4077818 (1978-03-01), Chu
patent: 4113532 (1978-09-01), Authier et al.
patent: 5017243 (1991-05-01), Otsubo
M. Kerber et al, Conference Record, 17th IEEE Photoltaic Specialists Conference (1984), pp. 275-280 (Oct. 1984).
T. L. Chu, Silicon Films on Foreign Substrates for Solar Cells, Journal of Crystal Growth 39 (1977), pp. 45-60.
T. L. Chu, Polycrystalline Silicon Layers for Solar Cells, J. Vac Sci. Technol., vol. 12, No. 4, Jul./Aug. 1975, pp. 912-915.
Graef et al, "Enhanced Crystallinity Of Silicon Films Deposited By CVD On Liquid Layers (CVDOLL Process): Silicon On Tin Layers In The Presence Of Hydrogen Chloride", Journal of Applied Physics, vol. 48, No. 9, Sep. 1977, pp. 3937-3940.
Chu et al, "Deposition And Properties Of Silicon On Graphite Substrates", Journal of the Electrochemical Society, vol. 23, Jan. 1976, pp. 106-110.
Kazmerski, "An Overview Of Thin-Film Polycrystalline Silicon Research And Development", 14th IEEE Photovoltaic Specialists Conference, 1980, pp. 281-286.

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