Semiconductor memory

Static information storage and retrieval – Powering – Conservation of power

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Details

365226, 36518901, 36523001, G11C 1140

Patent

active

052951120

ABSTRACT:
A high-speed low-power semiconductor memory comprises a stand-by mode determination circuit for monitoring the internal power source voltage from the voltage drop circuit. The voltage drop circuit comprises an active driver circuit and a stand-by driver circuit as well as an compensating driver circuit. The compensating driver circuit compensates, in response to an output of the stand-by mode determination circuit, for an increase of the internal circuit current. Further, since reduction of internal power source voltage which tends to occur at that time is prevented, the semiconductor memory of this invention can operate stably at high speed.

REFERENCES:
patent: 4953127 (1990-08-01), Nagahashi et al.

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