Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1990-09-12
1993-12-28
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
156643, 118722, 118723, 31511121, 31323131, 20429833, H01L 2100
Patent
active
052736091
ABSTRACT:
A multi-switch processing methodology and a multi-channel time-division plasma chopping device (10) for in-situ plasma-assisted semiconductor wafer processing associated with a plasma and/or photochemical processing equipment. The device (10) comprises a main transfer channel (72) associated with the processing reactor for transferring process gas and activated plasma mixtures into the reactor. A plurality of gas discharge channels (18, 22, 26, and 30) associate with the main transfer channel (72) for independently directing various gases and activated plasma combinations to main transfer channel (72). Process excitation sources (16, 20, 24 and 28) associate with at least one of said gas discharge or activation channels to independently and selectively activate process gases and to control gas activation and flow from the discharge channels to the main transfer channel (72). The method of the present invention performs multi-channel time-division plasma chopping by independently and selectively generating plasma or activated species using a plurality of remote plasma generation process energy sources (16, 20, 24, and 28) associated with the semiconductor wafer fabrication reactor.
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K. Tsujimoto et al., "A New Side Wall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 229-232.
Donaldson Richard L.
Goudreau George
Hearn Brian E.
Kesterson James C.
Matsil Ira S.
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