Method for forming interconnect structure, insulating films and

Details Method for forming interconnect structure, insulating films and Method for forming interconnect structure, insulating films and

1992-09-10

1995-04-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437235, H01L 21441

Patent

active

054058058

ABSTRACT:
A method for forming a multi-level wiring structure for semiconductor devices includes the steps of forming inter-layer insulating films and exposing at least a part of such films to a vapor containing alkoxyfluorosilane. This enables the water content of silicon oxide films to be reduced, the quality thereof to be made higher and the production yield and the reliability of the product to be enhanced. The method for forming an insulating film includes the steps of exposing such film to a vapor containing alkoxyfluorometal as a major component and heat-treating the exposed film. The method for forming a surface protective film includes the steps of forming a silicon oxide film at a temperature of 250.degree. C. at most, applying to such film a coating solution for SOG, heat-treating the film at a temperature of 200.degree. C. at most, exposing the film to a vapor containing alkoxyfluorosilane as a major component, heat-treating at a temperature of 250.degree. C. to form a fluorine-containing silicon oxide film. Then, a silicon nitride film is formed at a temperature not higher than 250.degree. C. At low temperatures not higher than 250.degree. C., the film has a high flatness and no crack develops thereon and no hillock develops on aluminum wirings. All these contribute to the fabrication of highly reliable semiconductor devices.

REFERENCES:
patent: 4853251 (1989-08-01), Ishihara et al.
patent: 5215787 (1993-06-01), Homma
patent: 5266525 (1993-11-01), Morozumi

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