Method of manufacturing a semiconductor device by laser annealin

Details Method of manufacturing a semiconductor device by laser annealin Method of manufacturing a semiconductor device by laser annealin

1994-01-21

1995-04-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437194, 437922, 437923, 2191216, 21912165, H01L 2126, H01L 21268, H01L 2142

Patent

active

054058040

ABSTRACT:
A method of manufacturing a semiconductor device in which a first insulation layer is formed on a semiconductor substrate and a metal wiring layer is formed on part of the first insulation layer and a polycrystalline silicon layer on another part thereof. A second insulation layer is formed over at least the metal wiring layer and is irradiated with a laser beam of low energy density to anneal the metal wiring layer.

REFERENCES:
patent: 4375993 (1983-03-01), Mori et al.
patent: 4549064 (1985-10-01), Delfino
patent: 4617723 (1986-10-01), Mukai
patent: 4674176 (1987-06-01), Tuckerman
patent: 4873413 (1989-10-01), Vesugi et al.
patent: 5306651 (1994-04-01), Masumo et al.

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