Process of fabricating a semiconductor substrate

Details Process of fabricating a semiconductor substrate Process of fabricating a semiconductor substrate

1994-05-25

1995-04-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 84, 437 86, 437 83, 437974, 148 335, H01L 21302

Patent

active

054058023

ABSTRACT:
A process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step of making a silicon monocrystalline thin film to epitaxially grow on a surface of the porous layer, a step of oxidizing the surface of the epitaxial growth layer, a step of forming a deposited film on the oxidized surface, thereby obtainig a first substrate, a step of closely contacting the deposited film of the first substrate to a second substrate, a step of heat treating the closely contacted substrates and a step of selectively etching the porous layer.

REFERENCES:
patent: 4177094 (1979-12-01), Kroon
patent: 4501060 (1985-02-01), Frye et al.
patent: 4891329 (1990-01-01), Reismau et al.
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5028558 (1991-07-01), Haisma et al.
Cullen, "Single-Crystal Silicon on Non-Single Crystal Insulators", J. Cryst. Growth, vol. 63, No. 3, Oct., 1983, pp. 429-590.
Easter et al., "Polysilicon to Silicon Bonding etc., " Ext. Abst., vol. 91-2, p. 707, Abst. 478, Fall Meeting, Electrochem. Soc., Oct. 1991.

Affiliated with

Also associated with

Rating

Process of fabricating a semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of fabricating a semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of fabricating a semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1538219