Method of producing a dynamic random access memory device having

Details Method of producing a dynamic random access memory device having Method of producing a dynamic random access memory device having

1992-10-08

1995-04-11

Fourson, George

Fishing, trapping, and vermin destroying

437 60, 437919, 148DIG20, H01L 2170, H01L 2700

Patent

active

054057981

ABSTRACT:
In forming a semiconductor integrated circuit device, a field insulation film is formed on a substrate using a selective thermal oxidation process whereby openings are formed in the insulation film thereby exposing the substrate at certain predetermined active regions. A patterned insulation film is formed on the field insulation film so as to present contact holes corresponding to the openings in the field insulation film. Each of the contact holes has a first pair of opposed edges extending in a first direction and defined by interior edges of the field insulation film and a second pair of opposed edges extending in a second direction and defined by edges of the patterned insulation film. The resultant structure provides a reduced pitch of the contact holes in the second direction.

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