Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1992-08-21
1994-03-15
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257743, 257749, 257 78, 257 99, 257 94, H01L 3300, H01L 29161, H01L 29205, H01L 29225
Patent
active
052948331
ABSTRACT:
An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc telluride selenide (ZnTe.sub.x Se.sub.1-x) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc telluride selenide layer and a conductor (such as metal) layer on the mercury selenide layer. The zinc telluride selenide and mercury selenide layers between the p-type zinc selenide and the conductor layer provide an ohmic contact by eliminating the band offset between the wide bandgap zinc selenide and the conductor. Step graded, linear graded, and parabolic graded layers of zinc telluride selenide may be provided. An integrated heterostructure is formed by epitaxially depositing the ohmic contact on the Group II-VI device. A removable overcoat layer may be formed on the Group II-VI device to allow room temperature atmospheric pressure transfer of the device from a zinc based deposition chamber to a mercury based deposition chamber, for deposition of the ohmic contact. A large area emitter may be formed by limiting the thickness of the mercury selenide layer so that optical radiation passes therethrough. A high efficiency optical emitter may be provided by using zinc telluride selenide or zinc sulfur telluride selenide to form an isoelectronic trap which produces broad and intense light output in the blue/green region.
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Larkins William D.
Meier Stephen D.
North Carolina State University
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