Resonant tunneling diode with reduced valley current

Details Resonant tunneling diode with reduced valley current Resonant tunneling diode with reduced valley current

1993-05-24

1994-03-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 25, 257 22, 257 23, 257201, H01L 2988

Patent

active

052948099

ABSTRACT:
A resonant tunneling diode having a quantum well sandwiched between first and second tunnel barrier layers and the quantum well and tunnel barrier layers sandwiched between an injection layer and a collector layer. The improvement includes a relatively thin layer of semiconductor material sandwiched between either the first tunnel barrier layer and the injection layer or the first tunnel barrier layer and the quantum well. The thin semiconductor layer has a valence band with an energy level lower than the valence band of the first tunnel barrier layer so as to prevent minority carriers from travelling toward the injection layer.

REFERENCES:
patent: 4849799 (1989-07-01), Capasso et al.
patent: 4959696 (1990-09-01), Frensley et al.

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