Thyristor

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357 20, 357 36, H01L 2974

Patent

active

039685128

ABSTRACT:
A thyristor including a semiconductor element which comprises a main thyristor and at least one auxiliary arrangement operative to amplify the control current, the main thyristor having a main emitter and the auxiliary arrangement having an auxiliary emitter, a base being common to both the main thyristor and the auxiliary arrangement, and pn-junctions disposed between the base and respective emitters, emitter electrodes being disposed upon the respective emitters, and a control electrode connected to the base, in which the edge length (1.sub.E) of the respective emitters is such that the current is i.sub.e > i.sub.u (i.sub.e1 22 i.sub.u1, i.sub.e2 > i.sub.u2 etc.), where i.sub.e is, in each case, the product of emitter length (1.sub.E) and a line current density j.sub.e of between 0.3 and 1.0 A/mm edge length and the current i.sub.u is that load current at which the voltage across the thyristor has fallen at least to a value of 10% of the breakover voltage, the emitters, the emitter electrodes and the control electrode being, at least in part, of strip configuration and interlaced with one another in the manner of combs. The ratios of the emitter edge lengths of the auxiliary arrangement of arrangements with respect to the main thyristor are between 1:2 and 1:5, preferably 1:3, and the auxiliary arrangement may be a thyristor or a transistor.

REFERENCES:
patent: 3214652 (1965-10-01), Knowles
patent: 3590346 (1971-06-01), Bilo et al.
patent: 3777229 (1973-12-01), Burtscher et al.
voss, "The Turn-on of Thyristors With Internal Gate Current Amplification", Paper Presented at the IEEE Meeting in Pittsburgh, Pa. in Oct. 1974.

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