Method of making double-self-aligned bipolar transistor structur

Details Method of making double-self-aligned bipolar transistor structur Method of making double-self-aligned bipolar transistor structur

1993-06-01

1994-03-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 69, 148DIG11, 257518, H01L 21265, H01L 2970

Patent

active

052945588

ABSTRACT:
A method of making an improved bipolar transistor and the transistor itself having a double-self-aligned device structure are disclosed. The method and the transistor device provide self-alignment of collector-base and base-emitter junctions to each other, in addition to self-alignment of the base and emitter.

REFERENCES:
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4139442 (1979-02-01), Bondur et al.
patent: 4160991 (1979-07-01), Anantha et al.
patent: 4318751 (1982-03-01), Horng
patent: 4319932 (1982-03-01), Jambotkar
patent: 4960726 (1990-10-01), Lechaton et al.
patent: 4994400 (1991-02-01), Yamaguchi et al.
patent: 4994881 (1991-02-01), Gomi
patent: 4996581 (1991-02-01), Hamasaki
patent: 5024957 (1991-06-01), Harame et al.
patent: 5039624 (1991-08-01), Kadota
patent: 5100813 (1992-03-01), Nihira
patent: 5118634 (1992-06-01), Neudeck et al.
patent: 5134082 (1992-07-01), Kirchgessner
patent: 5185276 (1993-02-01), Chen et al.
patent: 5204277 (1993-04-01), Somero et al.
patent: 5234846 (1993-08-01), Chu et al.
Washio, K. et al. "Fabrication Process and Device Characteristics of Sidewall Base Contact Structure Transistor Using Two-Step Oxidation of Sidewall Surface", IEEE Transactions on Electron Devices, vol. 35, No. 10, p. 1596, Oct. 1988.
Yamamoto, Y. et al. "SDX: A Novel Self-Aligned Technique and Its Application to High-Speed Bipolar LSI's", IEEE Transactions on Electron Devices, vol. 35, No. 10, p. 1601, Oct. 1988.
Konaka, S. et al. "A 30-ps Si Bipolar IC Using Super Self-Aligned Process Technology", IEEE Transactions on Electron Devices, vol. ED-33, No. 4, p. 526, Apr. 1986.

Affiliated with

Also associated with

Rating

Method of making double-self-aligned bipolar transistor structur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making double-self-aligned bipolar transistor structur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making double-self-aligned bipolar transistor structur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1535658