Single-poly-type bipolar transistor

Details Single-poly-type bipolar transistor Single-poly-type bipolar transistor

1995-06-05

1998-04-28

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257370, 257592, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

057448558

ABSTRACT:
In a bipolar transistor of a type in which metal electrodes are formed in direct contact with a p-type external base region and an n-type collector region, respectively, an external base region surrounding an outer periphery of an n-type emitter region is formed. A metal electrode is formed on the emitter region with a polycrystalline silicon layer therebetween. Thereby, formation of a buried diffusion layer can be eliminated, and thus a manufacturing cost of the bipolar transistor can be reduced while achieving a high performance of the bipolar transistor.

REFERENCES:
patent: 4892837 (1990-01-01), Kudo
patent: 5371401 (1994-12-01), Kurita
patent: 5471083 (1995-11-01), Ikeda et al.
patent: 5512785 (1996-04-01), Haver et al.
patent: 5618688 (1997-04-01), Reuss et al.
High Performance 1.0 .mu.mN-Well CMOS/Bipolar Technology, H. Momose, H. Shibata, Y. Mizutani, K. Kanzaki, and S. Kohyama, Symposium on VLSI Technology, Sep. 1983, pp. 40-41.
A 1.0 .mu.mN-Well CMOS/Bipolar Technology for VSLI Circuits, J. Miyamoto, S. Saitoh, H. Momose, H. Shibata, K. Kanzaki and S. Kohyama, IEDM Digest of Technical Papers, Dec. 1983, pp. 63-66.

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