Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-08-28
1998-04-28
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257222, 257227, 257230, 257231, 257233, 348317, 348319, 348320, H01L 27148, H01L 29768
Patent
active
057448310
ABSTRACT:
A solid-state image pick-up device 20 having a photoreceiving section 3 disposed on the obverse surface of a substrate 2 and performing photoelectric conversion. A readout gate 5 is disposed at one end of the photoreceiving section 3. A channel stop 8 is disposed at the other end of the photoreceiving section 3. A vertical transfer register 7 is provided for each of the readout gate 5 and the channel stop 8 at the end opposite to the photoreceiving section 3. A transfer electrode 10 is located in a position substantially right above the vertical transfer register 7. A light-shielding film 21 is disposed in such a manner that the transfer electrode 10 can be covered and that the portion right above the photoreceiving section 3 can be at least partially opened. The width W.sub.3 of the readout gate 5 is formed greater than the width W.sub.4 of the channel stop 8. The width W.sub.5 of the projecting portion 21b of the light-shielding film 21 adjacent to the readout gate 5 is formed smaller than the width W.sub.6 of the projecting portion 21b near the channel stop 8.
REFERENCES:
patent: 4597013 (1986-06-01), Matsumoto
patent: 5343060 (1994-08-01), Abe
patent: 5471246 (1995-11-01), Nishima et al.
patent: 5581099 (1996-12-01), Kusaka et al.
Martin Wallace Valencia
Sony Corporation
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