Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-05-15
1998-04-28
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 349 54, 349 42, 349 43, 349 46, 349149, 349151, H01L 2904, G02F 1343
Patent
active
057448205
ABSTRACT:
With respect to at least one of a plurality of TFTs constituting a liquid crystal display device; a signal wiring having one end functioning as a gate electrode of the TFT is formed so as to include: a main portion, formed by patterning a first wiring layer, having a disconnected portion in the vicinity of an active region of the transistor; and a connecting portion, formed by patterning a second wiring layer which is different from the first wiring layer, for interconnecting the disconnected portion. Thus, the breakdown of the gate insulating film of the TFTs during the ion implantation process can be prevented.
REFERENCES:
patent: 5285301 (1994-02-01), Shirahashi et al.
Matsushima Yasuhiro
Shimada Takayuki
Yamashita Toshihiro
Abraham Fetsum
Sharp Kabushiki Kaisha
Thomas Tom
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