Nonvolatile semiconductor memory

Details Nonvolatile semiconductor memory Nonvolatile semiconductor memory

1990-03-16

1991-08-13

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

365 51, 365 63, G11C 1140, G11C 1300

Patent

active

050401475

ABSTRACT:
A nonvolatile semiconductor memory is a programmable and erasable nonvolatile semiconductor memory including a semiconductor substrate of a first conductivity type, source and drain diffusion layers in the semiconductor substrate, and a channel region between the source and drain diffusion layers. A first insulation film is continuously on the channel region and the drain diffusion layer adjacent to the channel region, and a floating gate layer is on the first insulation film. Further, a second insulation film having a thin film portion which is thinner than the first insulation film is on the floating gate layer, and a control gate layer is on the second insulation film.

REFERENCES:
patent: 4361847 (1982-11-01), Harari
Patent Abstracts of Japan, vol. 6, Number 230 (E-142) [1108] Nov. 16, 1982.

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