Process for preparing superconducting junction of oxide supercon

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505701, 505702, 505731, 505732, 505730, 427 62, 427314, 4274192, 4274193, 4272557, 257 33, B05D 512, H01L 3924

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052927180

ABSTRACT:
Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order.
In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600.degree.-650.degree. C. for at least 5 minutes in the presence of O.sub.2, and is heated at a temperature between 200.degree. and 400.degree. C. during the non-superconducting intermediate thin film layer is deposited.

REFERENCES:
patent: 5061687 (1991-10-01), Takada et al.
Chang et al, "Microstructure of epitaxial ErBa.sub.2 Cu.sub.3 O.sub.7-x thin films grown on MgO(100) Substrates by rf magnetron sputtering", Appl. Phys. Lett. 54(23) Jun. 1989, pp. 2349-2351.
Eom et al, "Epitaxial and Smooth Films of .alpha.-Axis YBa.sub.2 Cu.sub.3 O.sub.7 ", Science, vol. 249, Sep. 1990 pp. 1549-1552.
IBM Technical Disclosure Bulletin, vol. 32 No. 6A, Nov. 1989 p. 288.
J. J. Kingston et al., "Multilayer YBa.sub.2 Cu.sub.3 O.sub.x -SrTiO.sub.3 -YBa.sub.2 Cu.sub.3 O.sub.x films for insulating crossovers" Applied Physics Letters vol. 56, No. 2, Jan. 8, 1990, New York, US pp. 189-191.
Tidjani M. E. et al., "Heteroepitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x -SrTiO.sub.3 -YBa.sub.2 Cu.sub.3 O.sub.7-x trilayers examined by transmission electron microscopy" Applied Physics Letters vol. 58, No. 18, Feb. 18, 1991, pp. 765-767 New York, US.
"High Tc superconducting oxide sandwich structures and tunnel junctions" IBM Technical Disclosure Bulletin vol. 31, No. 9, Feb. 1989, p. 217, New York, US.

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