Method for fabricating a semiconductor device having multilevel

Details Method for fabricating a semiconductor device having multilevel Method for fabricating a semiconductor device having multilevel

1996-11-25

1998-04-28

Niebling, John

Fishing, trapping, and vermin destroying

437240, 437241, 437242, H01L 2128

Patent

active

057443785

ABSTRACT:
At least one of an interlayer insulating film is formed by fluorine contained silicon oxynitride which is obtained by chemical deposition growth process using fluoroalkoxysilane gas, nitrogen gas contained gas, and oxygen gas contained gas. The at least one-film is formed at a temperature of lower than 200.degree. C. As a result, reliability of a semiconductor device to be fabricated as described above is enhanced.

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