Semiconductor photodetector device

Details Semiconductor photodetector device Semiconductor photodetector device

1990-08-07

1991-08-13

Jackson, Jr., Jerome

357 65, H01L 3110, H01L 2944, H01L 2715

Patent

active

050400398

ABSTRACT:
A photodetector device includes a stack of a light-absorbing layer, a window layer on a substrate, and a region in the window layer formed by reversing the conductivity type of the window layer extending to the light-absorbing layer. A surface protecting film is disposed on the window layer, with a light receiving area being left uncovered. An electrode makes ohmic contact with the reversed conductivity region and surrounds the light receiving area. A metallic light-blocking film is disposed on the protecting film with an insulating gap therebetween. The inner edge of the light-absorbing film is located in alignment with or inward of the p-n junction between the reversed conductivity type region and the window layer.

REFERENCES:
Martinelli et al., "Reliability of Planar InGaAs/InP Photodiodes Passivated with Boro-Phospho-Silicate Glass", Journal of Applied Physics, vol. 63, No. 1, Jan. 1988, pp. 250-252.

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