MOS type field effect transistor formed on a semiconductor layer

Details MOS type field effect transistor formed on a semiconductor layer MOS type field effect transistor formed on a semiconductor layer

1989-12-11

1991-08-13

Jackson, Jr., Jerome

357 234, 357 67, 357 231, H01L 2701

Patent

active

050400371

ABSTRACT:
A SOI-MOSFET formed on a thin semiconductor layer (3) having a thickness not more than 1500.ANG. includes a charge carrier absorbing region (9a, 9b, 9c) contacting with at least a portion of the bottom of a channel region (6) of a first conductivity type and with at least a portion of the bottom of a source region (7, 7a) of a second conductivity type. The carrier absorbing region (9a, 9b, 9c) absorbs excess carriers of the first conductivity type contained in the channel region (6).

REFERENCES:
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4489339 (1984-12-01), Uchida
patent: 4506279 (1985-03-01), Mizutani
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4763183 (1988-08-01), Ng et al.
patent: 4797721 (1989-01-01), Hsu
patent: 4943837 (1990-07-01), Konishi et al.
J. Colinge, "Reduction of Kink Effect in Thin-Film SOI MOSFET's", IEEE Electron Device Letters, vol. 9, No. 2, Feb. 1988, pp. 97-99.

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