Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-09-30
1998-11-10
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257638, 438631, 438668, H01L 2900, H01L 2358
Patent
active
058359877
ABSTRACT:
A void is defined between adjacent wiring lines to minimize RC coupling. The void has a low dielectric value approaching 1.0. For one approach, hollow silicon spheres define the void. The spheres are fabricated to a known inner diameter, wall thickness and outer diameter. The spheres are rigid enough to withstand the mechanical processes occurring during semiconductor fabrication. The spheres withstand elevated temperatures up to a prescribed temperature range. At or above a desired temperature, the sphere walls disintegrate leaving the void in place. For an alternative approach, adjacent wiring lines are "T-topped" (i.e., viewed cross-sectionally). Dielectric fill is deposited in the spacing between lines. As the dielectric material accumulates on the line and substrate walls, the T-tops grow toward each other. Eventually, the T-tops meet sealing off an internal void.
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Micro)n Technology, Inc.
Saadat Mahshid D.
Wilson Allan R.
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