Method of producing single crystal thin film

Details Method of producing single crystal thin film Method of producing single crystal thin film

1996-06-17

1998-04-28

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117101, 117102, C30B 2510

Patent

active

057439567

ABSTRACT:
A method of producing a high-quality single crystal thin film in which a temperature of a semiconductor single crystal substrate is raised or lowered in a short time with no occurrence of slippage in the substrate. In a cold-wall type reaction vessel, a substrate is placed on a holder which has no heating capability in the reaction vessel and a thin film is grown on the substrate, while a reaction gas is fed to flow in one direction through the reaction vessel, and at the same time, a temperature profile on the substrate along the flow direction of the reaction gas is adjusted to be uniform by a spatially controlled heating energy distribution and/or with the help of an auxiliary heating region provided at an upstream part of the substrate.

REFERENCES:
patent: 3042494 (1962-07-01), Gutsche
patent: 3293074 (1966-12-01), Nickl
patent: 3419424 (1968-12-01), Steggewentz
patent: 4147571 (1979-04-01), Stringfellow
patent: 4413022 (1983-11-01), Suntola
patent: 4632711 (1986-12-01), Fujita
patent: 5443033 (1995-08-01), Nishizawu

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