Mosfet output circuit with improved protection method

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307571, 307584, 363 58, H03K 17687, H02H 7122

Patent

active

052045633

ABSTRACT:
A MOSFET output driver circuit is protected from overstress caused by commutating currents. The MOSFETs are protected by employing a gate control circuit and a small inductor in series with the sources of the MOSFETs. The circuit limits the rate of change of current that reverse biases a MOSFET's drain-source diode. The circuit is applicable to totem-pole and bridge configurations.

REFERENCES:
patent: 4594650 (1986-06-01), Kinbara
patent: 4626715 (1986-12-01), Ishii

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