Method of manufacture for semiconductor device by forming deep a

Details Method of manufacture for semiconductor device by forming deep a Method of manufacture for semiconductor device by forming deep a

1992-07-29

1994-03-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437154, 148DIG70, 148DIG157, H01L 21266

Patent

active

052926710

ABSTRACT:
In a method of manufacturing CMOS transistors, a well that is of a second conductivity type is formed in a semiconductor substrate of a first conductivity type and is surrounded by a high concentration buried layer of the first conductivity type which completely extends around and below the well, and which also constitutes wells of the first conductivity type. The high-concentration buried layer is formed by a self-aligned process, and the potential of the buried layer can be easily fixed from the top of the semiconductor substrate so that a high degree of resistance is obtained to CMOS latch-up.

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